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AO4498L N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4498L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Features
VDS (V) = 30V ID = 18A RDS(ON) < 5.5m RDS(ON) < 7.5m (VGS = 10V) (VGS = 10V) (VGS = 4.5V)
- RoHS Compliant - Halogen Free
100% UIS Tested! 100% R g Tested!
SOIC-8 D
D
G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH Power Dissipation
B C C
G S
Maximum 30 20 18 14 140 42 88 3.1 2 -55 to 150
Units V V A A mJ W C
TC=25C TC=70C
ID IDM IAR EAR PD TJ, TSTG
TC=25C TC=70C
Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 31 59 16
Max 40 75 24
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4498L
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=18A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=16A Forward Transconductance VDS=5V, ID=18A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C 1.3 140 4.6 6.6 6 53 0.7 1 4 1910 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.7 316 227 1.4 37 VGS=10V, VDS=15V, ID=18A 18 4.8 11 8.1 VGS=10V, VDS=15V, RL=0.83, RGEN=3 IF=18A, dI/dt=500A/s
2
Min 30
Typ 36.5
Max
Units V
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
1 5 100 1.8 2.5 5.5 8 7.5
A nA V A m m S V A pF pF pF
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
2300
2.1 44.5
nC nC nC nC ns ns ns ns
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
8.6 29 8 14 40 17
Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/s
ns nC
A. The value of RJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The value A in any given application depends on the user's specific board design. B. The power dissipation P is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. D C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 pulses, duty cycle 0.5% max. s 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150C. The SOA curve provides a single pulse rating. Rev 0 : Jul-08 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4498L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140 10V 120 100 ID (A) 80 60 40 20 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 10 8 RDS(ON) (m) VGS=4.5V 6 4 2 0 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5 10 Normalized On-Resistance 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) VGS=10V ID=18A VGS=3.5V 5V 6V 4V ID(A) 50 40 30 20 10 0 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 125 25C 4.5V 80 70 60 VDS=5V
VGS=10V
17 5 VGS=4.5V 2 ID=16A 10
14 12 10 RDS(ON) (m) 8 6 4 25C 2 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 125C IS (A) ID=18A
1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 125C 25C
40
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4498L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=15V ID=18A Capacitance (pF) 3000 2500 Ciss 2000 1500 1000 500 0 0 20 30 Qg (nC) Figure 7: Gate-Charge Characteristics 10 40 0 Crss 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics RDS(ON) limited 10s 100s 1ms 10ms 100ms 10s 5 10 30 Coss
8
VGS (Volts)
6
4
2
0
120 ID(A), Peak Avalanche Current 100 80 60 40 20 0 0.000001 TA=150 TA=25C TA=100
1000.0 100.0
ID (Amps)
10.0 1.0 0.1
TA=125 0.0 0.1 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C)
TJ(Max)=150C TA=25C 1
DC
10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
1000
TJ(Max)=150C TA=25C
100
Power (W)
10
1 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4498L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
40
0.1 PD Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 T 100 1000
0.01
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note F)
Q
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4498L
Gate Charge Test Circuit & Waveform
Vgs Qg
+
VDC
10V
VDC
DUT Vgs Ig
+ Vds -
Qgs
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
RL Vds Vds
Vgs Rg
DUT
VDC
+ Vdd Vgs
td(on) ton tr td(off) toff tf
90%
10%
Vgs
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Q rr = - Idt
Vds -
Isd Vgs
L
Isd
IF
dI/dt I RM Vdd
VDC
+ Vdd Vds
Ig
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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